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standard power data sheet rev 1.01, 2014-05-19 ITS42008-SB-D smart octal high-side nmos-power switch
pg-dso-36 data sheet 2 rev 1.01, 2014-05-19 smart octal high-side nmos-power switch ITS42008-SB-D type package marking ITS42008-SB-D pg-dso-36 i2008d 1overview features ? programmable input thresholds: cmos or v s / 2 ? switching all types of resistive, inductive and capacitive loads ? fast demagnetization of inductive loads ? very low standby current ? optimized electromagnet ic compatibility (emc) ? constant current source diagnostic output for overtemperature ? overload protection ? undervoltage shutdown with hysteresis ? current limitation ? short circuit protection ? thermal shutdown with restart ? overvoltage protection (including load dump) ? reverse battery protecti on with external resistor ? loss of gnd and loss of vbb protection ? electrostatic dischar ge protection (esd) ? green product (rohs compliant) ITS42008-SB-D is not qualified and manufactured according to the requirements of infineon technologies with regards to automotive and/or transportation applications. description the ITS42008-SB-D is a protected 200m ? smart octal high-side nmos-power switch in a pg-dso-36 power package with charge pump, cmos or supply-rationmetric compatible input and constant current diagnostic feedback indicating overtemperature of the device. product summary overvoltage protection v sazmin = 47v operating voltage range: 11v < v s < 45v on-state resistance r dson = typ 150m ? operating temperature range: tj = -25c to 125c application ? all types of resistive, in ductive and capacitive loads. ? driver for electromagnetic relays ? power switch for 12v, 24v and 42v dc applications with cmos compatible or high voltage control interface ? micro controller or opto coupler compatible power switch with diagnosis feedback for overtemperature ? power managment for high-side-switching with low current cons umption in off-mode
data sheet 3 rev 1.01, 2014-05-19 ITS42008-SB-D block diagram and terms 2 block diagram and terms figure 1 block diagram 36 ITS42008-SB-D 20 protection and gate-control temperature sensor in1 out1 +v s logic esd protection 6 19 st gnd input levelshifter overtemperature diagnosis biasing supervision +v s 3 r in1 channel 1 in2 7 r in2 in3 8 r in3 in4 9 r in4 in5 10 r in5 in6 11 r in6 in7 12 r in7 in8 13 r in8 ls channel 4 channel 3 channel 6 channel 5 channel 7 channel 8 tab +v s 35 channel 2 33 34 31 32 29 30 27 28 25 26 23 24 21 22 out2 out3 out4 out5 out6 out7 out8 not connected 18 17 16 15 14 5 4 2 1
data sheet 4 rev 1.01, 2014-05-19 ITS42008-SB-D block diagram and terms figure 2 terms - parameter definition v st v out1 v s i s i l1 r l1 v fds1 gnd voltage- and current-definitions: switching times and slew rate definitions: off off on v ds v out 90% 0 +v s 10% t off t i l t 0 t on dv/t on 30% dv/t off 70% 40% t i st v in1 i in1 i out1 v in l h gnd i ls v ls gnd i gnd 36 ITS42008-SB-D 20 protection and gate -control temperature sensor in1 out1 +v s logic esd protection 6 19 st gnd input levelshifter overtemperature diagnosis biasing supervision +v s 3 r in1 channel 1 in2 7 r in2 in3 8 r in3 in4 9 r in4 in5 10 r in5 in6 11 r in6 in7 12 r in7 in8 13 r in8 ls channel 4 channel 3 channel 6 channel 5 channel 7 channel 8 tab +v s 35 channel 2 33 34 31 32 29 30 27 28 25 26 23 24 21 22 out2 out3 out4 out5 out6 out7 out8 not connected 18 17 16 15 14 5 4 2 1
data sheet 5 rev 1.01, 2014-05-19 ITS42008-SB-D pin configuration 3 pin configuration 3.1 pin assignment figure 3 pin configuration top view, pg-dso-36 3.2 pin definitions and functions pin symbol function 1, 2, 4, 5 nc not connected 3 ls input level progamming pin; level: cmos if ls=l; vs/2 if ls=h 6 in1 input channel 1, controles the power sw itch; the powerswitch is on when in1=h 7 in2 input channel 2, controles the power sw itch; the powerswitch is on when in2=h 8 in3 input channel 3, controles the power sw itch; the powerswitch is on when in3=h 9 in4 input channel 4, controles the power sw itch; the powerswitch is on when in4=h 10 in5 input channel 5, controles the power switch; the powerswitch is on when in5=h 11 in6 input channel 6, controles the power switch; the powerswitch is on when in6=h 12 in7 input channel 7, controles the power switch; the powerswitch is on when in7=h 13 in8 input channel 8, controles the power switch; the powerswitch is on when in8=h 14, 15, 16, 17, 18 nc not connected 19 gnd logic ground 20 st status output (common diagnostic output); current source on in case of overtemperature; integrated pull down resistor to gnd 21 and 22 out8 output to the load of chann el 8 (source of the dmos power switch) 23 and 24 out7 output to the load of chann el 7 (source of the dmos power switch) 25 and 26 out6 output to the load of chann el 6 (source of the dmos power switch) 27 and 28 out5 output to the load of chann el 5 (source of the dmos power switch) out1 out1 out2 out2 out3 out3 out4 out4 out5 out5 out6 out6 out7 out7 out8 out8 st gnd nc nc ls nc nc in1 in2 in3 in4 in5 in6 in7 in8 nc nc nc nc nc 18 17 16 15 14 13 12 11 10 9 8 7 6 5 4 3 2 136 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19
data sheet 6 rev 1.01, 2014-05-19 ITS42008-SB-D pin configuration 29 and 30 out4 output to the load of chann el 4 (source of the dmos power switch) 31 and 32 out3 output to the load of chann el 3 (source of the dmos power switch) 33 and 34 out2 output to the load of chann el 2 (source of the dmos power switch) 35 and 36 out1 output to the load of chann el 1 (source of the dmos power switch) tab vs supply voltage (design the wiring for th e maximum short circuit current and also for low thermal resistance) pin symbol function
data sheet 7 rev 1.01, 2014-05-19 ITS42008-SB-D general product characteristics 4 general product characteristics 4.1 absolute maximum ratings table 1 absolute maximum ratings 1) at t j = 25c unless otherwise specified. currents flowing into the device unless otherwise specified in chapter ?block diagram and terms? 1) not subject to production test, specified by design parameter symbol va lues unit note / test conditi on number min. typ. max. supply voltage vs voltage v s 45 v 4.1.1 voltage for short circuit protection v ssc v s v4.1.2 output stage outx output current; (short circuit current see electrical characteristics) i outx - 2 a self limited 4.1.3 reverse current through gnd current i rgnd 1.6 a self limited 4.1.4 input inx (channel 1 to 8) voltage v inx - 10 v s v4.1.5 current i in - 5 5 ma 4.1.6 input level progamming ls voltage v ls - 1 v s v4.1.7 status st voltage i ls - 0.3 v self limited 4.1.8 current i ls 1 ma self limited 4.1.9 temperatures junction temperature t j -40 125 c 4.1.10 storage temperature t stg -55 125 c 4.1.11 power dissipation ta = 25 c 2) 2) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6 cm2 (one layer, 70mm thick) copper area for vbb connection. pcb is vertical without blown air p tot 3.3 w 4.1.12 inductive load switch-off energy dissipation tj = 125 c; il= 625ma 1) ; all channels active e as 1 j single pulse 4.1.13 tj = 125 c; il= 625ma 1) ; one channel active e as 10 j single pulse 4.1.14 esd susceptibility esd susceptibility (pins inx; ls and st) v esd -1 1 kv hbm 3) 3) esd susceptibility hbm according to eia/jesd 22-a 114. 4.1.15 esd susceptibility (all other pins) v esd -5 5 kv hbm 3) 4.1.16
data sheet 8 rev 1.01, 2014-05-19 ITS42008-SB-D general product characteristics note: exposure to absolute maximum rating conditions for extended periods may affect device reliability. integrated protection functions are desi gned to prevent ic destruction unde r fault conditions described in the data sheet. fault conditions are considered as ?outside? the normal operating range. protection functions are neither designed for contin uous nor repetitive operation. 4.2 functional range note: within the functional range the ic operates as de scribed in the circuit description. the electrical characteristics are specifi ed within the conditions given in the re lated electrical ch aracteristics table. 4.3 thermal resistance note: this thermal data was generated in accordance wit h jedec jesd51 standards. fo r more information, go to www.jedec.org . table 2 functional range parameter symbol values unit note / test condition number min. typ. max. nominal operating voltage v s 11 45 v v s increasing 4.2.1 table 3 thermal resistance 1) 1) not subject to production test, specified by design parameter symbol values unit note / test condition number min. typ. max. thermal resistance - junction to tab r thj-tab 2.8 k/w 4.3.1 thermal resistance - junction to ambient - 1s0p, minimal footprint r thja_1s0p 44.1 k/w 2) 2) specified r thja value is according to jedec jesd 51-3 at natural convection on fr4 1s0p board, footprint; the product (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 1x 70m cu. 4.3.2 thermal resistance - junction to ambient - 1s0p, 300mm 2 r thja_1s0p_300mm 26.5 k/w 3) 3) specified r thja value is according to jedec jesd51-3 at natural convection on fr4 1s0p board, cu, 300mm 2 ; the product (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 1x 70m cu. 4.3.3 thermal resistance - junction to ambient - 1s0p, 600mm 2 r thja_1s0p_600mm 23.8 k/w 4) 4) specified r thja value is according to jedec jesd51-3 at natural convection on fr4 1s0p board, 600mm 2 ; the product (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 1x 70m cu. 4.3.4 thermal resistance - junction to ambient - 2s2p r thja_2s2p 19.9 k/w 5) 5) specified r thja value is according to jedec jesd51-2,-5,-7 at na tural convection on fr4 2s2p board; the product (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm b oard with 2 inner copper layers (2 x 70m cu, 2 x 35m cu). 4.3.5 thermal resistance - junction to ambient with thermal vias - 2s2p r thja_2s2ptv 18.8 k/w 6) 4.3.6
data sheet 9 rev 1.01, 2014-05-19 ITS42008-SB-D general product characteristics 6) specified r thja value is according to jedec jesd51-2,-5,-7 at natural convection on fr4 2s2p board with two thermal vias; the product (chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70m cu, 2 x 35m cu. the diameter of the two vias are equal 0.3mm and have a plating of 25um with a copper heatsink area of 3mm x 2mm). jedec51-7: the two plated-through hole vias should have a solder land of no less than 1.25 mm diameter with a drill hole of no less than 0.85 mm diameter.
data sheet 10 rev 1.01, 2014-05-19 ITS42008-SB-D electrical characteristics 5 electrical characteristics table 4 v s = 15v to 30v ; tj = -25c to 125c; v ls = 0v; all voltages with respect to ground, currents flowing into the device unless otherwise specified in chapter ?block diagram and terms?. typical values at v s = 13.5v, t j = 25c; index ?x? means ?number of channel 1 to 8?. parameter symbol values unit note / test condition number min. typ. max. powerstages nmos on resistance r dsonx 150 200 m ? i outx = 0.5a; t j = 25c; v ls = v inx = v s =15v 5.0.1 nmos on resistance r dsonx 270 320 m ? i outx = 0.5a; t j = 125c; v ls = v inx = v s =15v 5.0.2 timings of power stages 1) turn on time(to 90% of v outx ); l to h transition of v inx t onx 50 100 s v s =15v; r lx =47 ? 5.0.3 turn off time (to 10% of v outx ); h to l transition of v inx t offx 75 150 s v s =15v; r lx =47 ? 5.0.4 on-slew rate (10 to 30% of v outx ); l to h transition of v inx sr onx 1.0 2.0 v / s v s =15v; r lx =47 ? 5.0.5 off-slew rate (70 to 40% of v outx ); h to l transition of v inx sr offx 1.0 2.0 v / s v s =15v; r lx =47 ? 5.0.6 under voltage lockout (charge pump start-stop-restart) supply undervoltage; charge pump stop voltage v suv 7.0 10.5 v v s decreasing 5.0.7 supply startup voltage; charge pump restart voltage v ssu 11.0 v v s increasing 5.0.8 supply undervoltage hysteresis v suhy 0.5 v v suhy = v ssu - v suv 5.0.9 current consumption operating current i gnd 512 ma v inx = v ls = v s =30v 5.0.10 standby current i sstb 50 150 a v inx = 6.5v; v ls = v s =15v; v outx = 0v 5.0.11 output leakage current i outlkx 510 a v inx = 6.5v; v ls = v s =15v v outx = 0v 5.0.12 protection functions 2) initial peak short circuit current limit i lscpx 1.9 a t j = -25c v ls = v s = v inx =30v; t mx =700s 5.0.13
data sheet 11 rev 1.01, 2014-05-19 ITS42008-SB-D electrical characteristics initial peak short circuit current limit i lscpx 1.4 a t j = 25c v ls = v s = v inx =30v; t mx =700s 5.0.14 initial peak short circuit current limit i lscpx 0.7 a t j = 125c v ls = v s = v inx =30v; t mx =700s 5.0.15 repetitive short circuit current limit t j = t jtrip ; see timing diagrams i lscrx 1.1 a v inx = 5.0v; 5.0.16 output clamp at v outx = v s - v dsclx (inductive load switch off) v dsclx 47 53 60 v i outx = 4ma; v ls =30v 5.0.17 overvoltage protection v saz 47 v i s = 4ma v ls =30v 5.0.18 thermal overload trip temperature t jtrip 135 c 5.0.19 thermal hysteresis t hys 10 k 5.0.20 reverse battery 3) continuous reverse battery voltage v srev 45 v 5.0.21 forward voltage of the drain- source reverse diode v fdsx 1.2 v i fds =1.25a; v in = 0v 5.0.22 input interface; pin inx input turn-on threshold voltage v inonx 2.2 v ls = l; cmos mode 5.0.23 input turn-off threshold voltage v inoffx 0.8 v ls = l; cmos mode 5.0.24 input turn-on threshold voltage v inonx v st /2 +1 v ls = h or open; ratiometric mode 5.0.25 input turn-off threshold voltage v inoffx v st /2 -1 v ls = h or open; ratiometric mode 5.0.26 input threshold hysteresis v inhysx 0.3 v 5.0.27 off state input current i inoffx 8als=l; cmos mode v inx =0.8v 5.0.28 on state input current i inonx 70 a ls = l; cmos mode v inx =2.2v 5.0.29 off state input current i inoffx 80 a ls = h or open; ratiometric mode v inx = v st /2 -1 5.0.30 on state input current i inonx 260 a ls = h or open; ratiometric mode v inx = v st /2 +1 5.0.31 input switch on delay time t don 150 340 s 5.0.32 table 4 v s = 15v to 30v ; tj = -25c to 125c; v ls = 0v; all voltages with respect to ground, currents flowing into the device unless otherwise specified in chapter ?block diagram and terms?. typical values at v s = 13.5v, t j = 25c; index ?x? means ?number of channel 1 to 8?. parameter symbol values unit note / test condition number min. typ. max.
data sheet 12 rev 1.01, 2014-05-19 ITS42008-SB-D electrical characteristics input resistance r inx 235k ? 5.0.33 input interface; pin ls pull down resistance r ls 300 800 k ? v ls = v s =15v 5.0.34 status output (current source); pin st status output current i st 234ma v st =5v v ls = v s =30v 5.0.35 status leakage current i stlk - 2 a v st =0v; t j < 135c; v ls = v s =30v 5.0.36 1) timing values only with high slewrate input signal; otherwise slower. 2) integrated protection functions are designed to prevent ic destruction under fault conditions described in the data sheet. fault conditions are considered as ?outside? normal operating range. protection functions ar e not designed for continuous repetitive operation. 3) requires a 150w resistor in gnd connection. the reverse load current trough the intrinsic dr ain-source diode of the power- m table 4 v s = 15v to 30v ; tj = -25c to 125c; v ls = 0v; all voltages with respect to ground, currents flowing into the device unless otherwise specified in chapter ?block diagram and terms?. typical values at v s = 13.5v, t j = 25c; index ?x? means ?number of channel 1 to 8?. parameter symbol values unit note / test condition number min. typ. max.
data sheet 13 rev 1.01, 2014-05-19 ITS42008-SB-D typical performance graphs 6 typical performance graphs typical characterisitics transient thermal impedance z thja versus pulse time t p @ 6cm2 heatsink area transient thermal impedance z thja versus pulse time t p @ min footprint on-resistance r dsonx versus junction temperature t j on-resistance r dsonx versus supply voltage v s d = t p / t d = t p / t ?40 ?25 0 25 50 75 100 125 0 50 100 150 200 250 t j [ c] r dsonx [m ] v s =15v;v inx =5v;v ls =0v 10 20 30 40 50 0 50 100 150 200 250 300 v s [v] r dsonx [m ] t j =?40 c;i l =0.5a t j =25 c;i l =0.5a t j =125 c;i l =0.5a
data sheet 14 rev 1.01, 2014-05-19 ITS42008-SB-D typical performance graphs typical characterisitics switch on time t onx versus junction temperature t j switch off time t offx versus junction temperature t j on slewrate sr onx versus junction temperature t j off slewrate sr offx versus junction temperature t j ?25 0 25 50 75 100 125 0 10 20 30 40 50 60 70 80 t j [ c] t onx [ s] v s =15v;r lx =47 ?25 0 25 50 75 100 125 0 10 20 30 40 50 60 70 80 90 100 t j [ c] t offx [ s] v s =15v;r lx =47 ?25 0 25 50 75 100 125 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 t j [ c] dv dt on [ v s ] v s =15v;r lx =47 ?25 0 25 50 75 100 125 0 0.2 0.4 0.6 0.8 1 1.2 1.4 t j [ c] ? dv dt off [ v s ] v s =15v;r lx =47
data sheet 15 rev 1.01, 2014-05-19 ITS42008-SB-D typical performance graphs typical characterisitics standby current i sstb versus junction temperature t j output leakage current i outlkx versus junction temperature t j initial peak short circuit current limt i lscpx versus junction temperature t j initial short circuit shutdown time t don versus junction temperature t j ?25 0 25 50 75 100 125 0 5 10 15 20 25 30 35 40 45 50 t j [ c] i sstb [ a] v inx =0v;v s =30v;v outx =0v ?25 0 25 50 75 100 125 0 0.5 1 1.5 2 2.5 3 3.5 4 t j [ c] i outlk [ a] v s =30v;v inx =0v;v outx =0v ?25 0 25 50 75 100 125 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 t j [ c] i lscpx [a] v s =24v 10 20 30 40 50 0 50 100 150 200 250 300 350 400 450 500 v s [v] t don [ s] t j =25 c
data sheet 16 rev 1.01, 2014-05-19 ITS42008-SB-D typical performance graphs typical characterisitics input current consumption i inx versus junction temperature t j input current consumption i inx versus input voltage v in input current consumption i inx versus junction temperature t j input current consumption i inx versus input voltage v in ?25 0 25 50 75 100 125 0 5 10 15 20 25 30 35 40 45 50 t j [ c] i inx [ a] v inx 0.7v;v s =15v v inx 2.2v;v s =15v 0 5 10 15 0 5 10 15 20 25 30 35 40 45 50 v inx [v] i inx [ a] t j =?25 c;v s =15v t j =25 c;v s =15v t j =125 c;v s =15v ?25 0 25 50 75 100 125 0 20 40 60 80 100 120 140 160 180 t j [ c] i inx [ a] v inx 0.4 ? v s ;v s =30v v inx 0.6 ? v s ;v s =30v 0 5 10 15 20 25 30 0 20 40 60 80 100 120 140 160 180 200 v inx [v] i inx [ a] t j =?25 c;v ls =v s =30v t j =25 c;v ls =v s =30v t j =125 c;v ls =v s =30v
data sheet 17 rev 1.01, 2014-05-19 ITS42008-SB-D typical performance graphs typical characterisitics input threshold voltage v inh,lx versus junction temperature t j input threshold voltage v inh,lx versussupply voltage v s input threshold voltage v inh,lx versus junction temperature t j input threshold voltage v inh,lx versussupply voltage v s ?25 0 25 50 75 100 125 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 t j [ c] v inx [v] off;v s =15v on;v s =15v 10 20 30 40 50 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 v s [v] v inx [v] off;t j =25 c on;t j =25 c ?25 0 25 50 75 100 125 12 12.5 13 13.5 14 14.5 15 15.5 16 t j [ c] v inx [v] off;v ls =v s =30v on;v ls =v s =30v 10 20 30 40 50 5 10 15 20 25 v s [v] v inx [v] off;t j =25 c;v ls =v s on;t j =25 c;v ls =v s
data sheet 18 rev 1.01, 2014-05-19 ITS42008-SB-D typical performance graphs typical characterisitics max. allowable load inductance l versus load current i lx max. allowable inductive single pulse switch-off energy e as versus load current i lx status output current i st versus supply voltage v s internal pull down resistor r ls at pin ls versus supply voltage v s 0.3 0.4 0.5 0.6 0.7 0 5 10 15 20 25 30 35 40 45 i lx [a] l [h] all channels on t jstart =125 c;v s =24v;r l =0 0.3 0.4 0.5 0.6 0.7 0 0.5 1 1.5 2 2.5 3 3.5 i lx [a] easx [j] all channels on t jstart =125 c;v s =24v v s v s =15v v st =5v t j =135c i st 10 15 20 25 30 35 40 45 2.5 2.55 2.6 2.65 2.7 2.75 2.8 2.85 2.9 2.95 3 v s [v] i st [ma] v s =15v;v st =5v;t j =135 c 10 20 30 40 50 0 0.5 1 1.5 v s [v] r ls [m ] t j =?25 c;v ls =v s =15v t j =25 c;v ls =v s =15v t j =125 c;v ls =v s =15v
data sheet 19 rev 1.01, 2014-05-19 ITS42008-SB-D application information 7 application information 7.1 application diagram the following information is given as a hint for the implementation of the device only and shall not be regarded as a description or warranty for a certain functi onality, condition or quality of the device. figure 4 application diagram the ITS42008-SB-D can be connected directly to the battery of a supply network. it is recommended to place a ceramic capacitor (e.g. c s = 220nf) between supply and gnd of the e cu to avoid line disturbances. wire harness inductors/resistors are sketched in the application circuit above. the complex load (resistive, capacitive or indu ctive) must be connected to the output pin out. a built-in current limit protects the device against destruction. the ITS42008-SB-D can be switched on and off with ground related standard logic signal at pin inx if the level programming pin ls is set to l. if ls is connected to the supply voltage v s the input threshold is set to ~ 50% of v s . to achieve a higher robustness it is recommended to connect the ls pin to gnd or supply voltage. if the pin ls is left open the thresholds are automatically set to cmos level caused by an internal high ohmic pull down resistor to gnd. in standby mode (all inputs inx=l) the ITS42008-SB-D is deactivated with very low current consumption. the output voltage slope is controlled during on and off tr ansistion to minimize emissions. only a small ceramic capacitor cout=1nf is recommended to attenuate rf noise. wire harness complex load electronic control unit wire harness ecu gnd c s 220nf gnd2 gnd3 c out 1nf 36 ITS42008-SB-D 20 protection and gate -control temperature sensor in1 out1 +v s logic esd protection 6 19 st gnd input levelshifter overtemperature diagnosis biasing supervision +v s 3 r in1 channel 1 in2 7 r in2 in3 8 r in3 in4 9 r in4 in5 10 r in5 in6 11 r in6 in7 12 r in7 in8 13 r in8 ls channel 4 channel 3 channel 6 channel 5 channel 7 channel 8 tab +v s 35 channel 2 33 34 31 32 29 30 27 28 25 26 23 24 21 22 out2 out3 out4 out5 out6 out7 out8 not connected 18 17 16 15 14 5 4 2 1 gnd1 control interface ecu gnd
data sheet 20 rev 1.01, 2014-05-19 ITS42008-SB-D application information in the following chapters the main features, some typical waverforms and the protection behaviour of the ITS42008-SB-D is shown. for further details plea se refer to application notes on the infineon homepage. 7.2 diagnosis description for diagnostic purpose the device pr ovides a digital output pin st in order to indicate fault conditions. the status output (st) of the its42008 -sb-d is a high volt age current source. in ?normal? operation mode (no overtemperature) the cu rrent source is switched off. an internal pull down resistor pulls pin st down to gnd. in case of overtemper ature the current source is activated. to limit the voltage at pin st an external zenerdiode to gnd must be added. the following truth table defines the status output. table 5 truth table of diagnosis feature device operation inx outx current source at st comment normal operation l l off normal operation h h off short circuit to gnd l l off short circuit to gnd h l off undervoltage at v s ll off undervoltage at v s hl off overtemperature l l off overtemperature h l on toggeling with restart
data sheet 21 rev 1.01, 2014-05-19 ITS42008-SB-D application information 7.3 special feature description figure 5 special feature description energy stored in the load inductance is given by : e l = i l 2*l/2 while demagnetizing the load inductance the energy dissipated by the power -dmos is: e as = e s + e l ?e r with an approximate solution for r l =0 : e as = ? * l * i l 2 * {(1- v s / (v s -v dscl ) when an inductive load is switched off a current path must be established until the current is sloped down to zero (all energy removed from the inductive load ). for that purpose the series combination z dscl is connected between gate and drain of the power dmos acting as an active clamp . when the device is switched off , the voltage at out turns negative until v dscl is reached. the voltage on the inductive load is the difference between v dscl and v s . if reverse voltage is applied to the device : 1.) current via load resistance rl : i rev1 = (v rev ?v fds ) / r l 2.) current via input pin in and dignostic pin st : i rev2 = i st +i in to protect the control device the current must be limited with the extrernal series resistors. both currents will sum up to: i rev = i rev1 + i rev2 if over-voltage is applied to the v s -pin: voltage is limited to v zdsaz ; current can be calculated : i zdsaz = (v s ?v zdsaz ) / r gnd a typical value for rgnd is 150 . in case of esd pulse on the input pin there is in both polarities a peak current i inpeak ~ v esd / r in z l i rev1 i rev2 v rev l l i l v batt v dscl v out l l e r r l e l e batt e load z l v batt v on v out v dscl i rev v fds drain-source power stage clamper v dscl : energy calculation: supply over voltage: supply reverse voltage: r gnd r gnd r st2 v control r gnd x ITS42008-SB-D 19 r in tab gnd x 20 st inx zd in i in zd saz zd dscl r ls i st outx v s ls 3 level control over temp x ITS42008-SB-D 19 r in tab gnd x 20 st inx zd in i in zd saz zd dscl r ls i st outx v s ls 3 level control over temp r st x ITS42008-SB-D 19 r in tab gnd x 20 st inx zd in i in zd saz zd dsc l r ls i st outx v s ls 3 level control over temp x ITS42008-SB-D 19 r in tab gnd x 20 st inx zd in i in zd saz zd dscl r ls i st outx v s ls 3 level control over temp
data sheet 22 rev 1.01, 2014-05-19 ITS42008-SB-D application information 7.4 typical application waveforms figure 6 typical application waveforms of the ITS42008-SB-D general input output waveforms: v s t 0 i l t 0 off off on v ds v out 90% 0 +v s 10% t off t i l t 0 t on sr on = dv/dt 30% sr off = dv/dt 70% 40% t waveforms switching a resistive load: off off on on waveforms switching a capacitive load: waveforms switching an inducitive load : v out t t 0 i l t 0 ~ v s v out t t 0 i l t 0 ~ v s t v out v dscl i lsc off off on on off off on on t t v in l h v in l h v in l h v in l h t off on i st off on i st i st t t t don off on off on i st
data sheet 23 rev 1.01, 2014-05-19 ITS42008-SB-D application information 7.5 protection behavior figure 7 protective behaviour of the ITS42008-SB-D overtemperature concept: overtemperature behavior: overtemperature toggling normal waveforms turn on into a short circuit : waveforms short circuit during on state : tt off off overloaded out shorted to gnd off normal operation on t jtrip t hys v out t t 0 i l 0 i lscr i lscp t m t scoff shut down by overtemperature and restart by cooling (toggling ) shut down by overtemperature and restart by cooling (toggling ) v out t v in l t 0 i l 0 i lscr t off off on on v out t t 0 t j t t jtrip t hys off t j off t jrestart cooling down heating up device status t h v in l h off on i st t v in l h off on i st t i peak controlled by the current limit circuit i peak controlled by the current limit circuit off on i st
data sheet 24 rev 1.01, 2014-05-19 ITS42008-SB-D package outlines and footprint 8 package outlines and footprint figure 8 pg-dso-36 (plastic dual small outlin e package, rohs-compliant) to meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. green products are rohs-compliant (i.e pb- free finish on leads and suitable for pb-fre e soldering according to ipc/jedec j-std-020
data sheet 25 rev 1.01, 2014-05-19 ITS42008-SB-D revision history 9 revision history trademarks of infineon technologies ag aurix?, c166?, canpak?, ci pos?, cipurse?, econopac k?, coolmos?, coolset?, corecontrol?, crossav e?, dave?, di-pol?, easypim?, econobridge?, econodual?, econopim?, econopack?, eicedriver?, eupec?, fcos?, hitfet?, hybridpack?, i2rf?, isoface?, isopack?, mipaq?, modstack?, my-d?, novalithic?, optimos?, origa?, powercode?; primarion?, pr imepack?, primestack?, pr o-sil?, profet?, rasic?, reversave?, satric?, si eget?, sindrion?, sipmos?, smartl ewis?, solid flash?, tempfet?, thinq!?, trenchstop?, tricore?. other trademarks advance design system? (ads) of agilent te chnologies, amba?, arm?, multi-ice?, keil?, primecell?, realview?, thumb?, vision? of arm limited, uk. autosar? is licensed by autosar development partnership. bluetooth? of bluetooth sig inc. cat-iq? of dect forum. colossus?, firstgps? of trimble navigation ltd. emv? of emvc o, llc (visa holdings in c.). epcos? of epcos ag. flexgo? of microsoft corp oration. flexray? is licensed by flexray consortium. hyperterminal? of hilgraeve incorporated. iec? of commission electrot echnique internationale. irda? of infrared data association corporation. iso? of international organization for standardization. matlab? of mathworks, inc. maxim? of maxim integrated products, inc. microtec?, nucleus? of mentor graphics corporation. mipi? of mipi allianc e, inc. mips? of mips technologies, inc., u sa. murata? of murata manufacturing co., microwave office? (mwo) of applied wave research inc., omnivision? of omnivision technologies, inc. openwave? openwave systems inc. red hat? red hat, inc. rfmd? rf micro devices, inc. sirius? of si rius satellite radio inc. solaris? of sun microsystems, inc. spansion? of spansion llc ltd. symbian? of symbian software limited. taiyo yuden? of taiyo yuden co. teaklite? of ceva, inc. tektro nix? of tektronix inc. toko? of toko kabushiki kaisha ta. unix? of x/open company limited. verilo g?, palladium? of cadence design systems, inc. vlynq? of texas instruments incorpor ated. vxworks?, wind river? of wind ri ver systems, inc. zetex? of diodes zetex limited. last trademarks update 2011-11-11 revision date changes v 1.01 14-05-19 datasheet release editorial change on page 11 temperature conditions for lines 5.0.14 and 5.0.15 were corrected to 25c and 125c respectively v 1.0 12-09-01 datasheet release
edition 2014-05-19 published by infineon technologies ag 81726 munich, germany ? 2014-05-19 infineon technologies ag all rights reserved. legal disclaimer the information given in this docu ment shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infine on technologies hereby disclaims any and all warranties and liabilities of any kind, including witho ut limitation, warranties of non-infrin gement of intellectua l property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. the infineon technologies component descr ibed in this data sheet may be used in life-support devices or systems and/or automotive, aviation and aero space applications or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life- support automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. life support devices or syste ms are intended to be implanted in th e human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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